A cryogenic GaAs PHEMT/ferroelectric Ku-band tunable oscillatorROMANOFSKY, R. R; VAN KEULS, F. W; MIRANDA, F. A et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.171-Pr3.174, issn 1155-4339Conference Paper

A new method to extract the effective trap density at the buried oxide/underlying substrate interface in enhancement-mode SOI MOSFETs at low temperaturesPAVANELLO, M. A; MARTINO, J. A..Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.45-Pr3.48, issn 1155-4339Conference Paper

Capabilities of antenna-coupled superconducting microbolometersLEONOV, V. N.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.267-Pr3.270, issn 1155-4339Conference Paper

Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2-300 KALAWNEH, I; SIMOEN, E; BIESEMANS, S et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.3-Pr3.8, issn 1155-4339Conference Paper

Express-control system of superconducting microcircuits fabrication technology by anodization spectroscopy methodVOJTOVICH, I; NAVALA, S; SHPILEVOY, P et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.309-Pr3.312, issn 1155-4339Conference Paper

Miniature temperature sensors based on Ge filmsMITIN, V. F.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.193-Pr3.195, issn 1155-4339Conference Paper

Modeling of the low temperature electron distribution function in ultra-fast transient situations for semiconductor devicesCHENG, M.-C.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.67-Pr3.70, issn 1155-4339Conference Paper

Non-equilibrium properties of Josephson critical current in Nb-based three terminal superconducting tunnel devicesAMMENDOLA, G; PARLATO, L; PELUSO, G et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.255-Pr3.258, issn 1155-4339Conference Paper

Some peculiarities of low temperature conductivity of silicon diodesSHWARTS, Y. M; SMERTENKO, P. S; SOKOLOV, V. N et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.75-Pr3.78, issn 1155-4339Conference Paper

X-ray response of Nb-based superconducting tunnel junctionCRISTIANO, R; ESPOSITO, E; AKOH, H et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.275-Pr3.278, issn 1155-4339Conference Paper

Cryogenic behavior of low-noise monolithic preamplifiers using a JFET as a front-end elementCITTERIO, M; MANFREDI, P. F.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.155-Pr3.159, issn 1155-4339Conference Paper

Development of cryogenic Ge JFETsWARD, R. R; KIRSCHMAN, R. K; JHABVALA et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.123-Pr3.126, issn 1155-4339Conference Paper

Effects induced by electron beam irradiation on the properties of Y₁Ba₂Cu₃O_7-x biepitaxial Josephson junctionsTAFURI, F; NADGORNY, B; SHOKHOR, S et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.289-Pr3.292, issn 1155-4339Conference Paper

Electron impact-ionization effects in UHV/CVD SiGe HBT's in the temperature range of 300 to 83 KNIU, G; GOGINENI, U; CRESSLER, J. D et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.103-Pr3.107, issn 1155-4339Conference Paper

Noise of high-Tc superconducting films and bolometersKHREBTOV, I. A; LEONOV, V. N; LAUKEMPER, J. K et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.293-Pr3.296, issn 1155-4339Conference Paper

Performance of a SQUID read-out system for superconducting tunnel junctionsMARTIN, D. D. E; PEACOCK, A.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.225-Pr3.228, issn 1155-4339Conference Paper

Perspectives of the cryo-electronics for the year 2000GUTIERREZ-D., E. A; CLAEYS, C; SIMOEN, E et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.315-Pr3.320, issn 1155-4339Conference Paper

Resonance of low-frequency collective plasma oscillations at phase-slip centersCHURILOV, G. E.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.301-Pr3.304, issn 1155-4339Conference Paper

Temperature dependence of hot-carrier effects in 0.2 μm N- and P-channel fully-depleted unibond MOSFETsRENN, S. H; RAYNAUD, C; BALESTRA, F et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.13-Pr3.16, issn 1155-4339Conference Paper

The temperature influence of substrate current in submicron N-channel MOSFETsCHEN, S.-H; CHEN, S.-L; CHUNG, S.-T et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.53-Pr3.56, issn 1155-4339Conference Paper

WOLTE 3 European Workshop on Low Temperature ElectronicsBROGIATO, Luciana; CAMIN, Daniel V; PESSINA, G et al.Journal de physique. IV. 1998, Vol 8, Num 3, issn 1155-4339, 331 p.Conference Proceedings

Band tails and their influence on the performance of bipolar SiGe devices at low temperaturesSOKOLIC, S; FERK, B; AMON, S et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.113-Pr3.116, issn 1155-4339Conference Paper

Cryogenic amplification system for ultra-low noise measurementsLOMBARDI, G; MACUCCI, M; GIANNETTI, R et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.185-Pr3.188, issn 1155-4339Conference Paper

Eddy-current nondestructive measurements with different HTS-SQUID spatial orientationsVALENTINO, M; PEPE, G; RUOSI, A et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.249-Pr3.252, issn 1155-4339Conference Paper

Features of indirect-band-to-band tunneling in an insulated-gate lateral pn junction device on a SIMOX substrate with an ultrathin 10-nm-thick silicon layerOMURA, Y.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.63-Pr3.66, issn 1155-4339Conference Paper